-
1 impurity mobility
домішкова рухливістьEnglish-Ukrainian dictionary of microelectronics > impurity mobility
-
2 mobility
рухливість - carrier mobility
- diffusion mobility
- drift mobility
- electron mobility
- Hall mobility
- hole mobility
- impurity mobility
- intrinsic mobility
- vacancy mobility -
3 profile
1. ім.1) профіль2) розріз; перетин2. дієсл. профілювати - Auger depth profile
- charge-carrier density profile
- chip profile
- concentration profile
- density profile
- depth profile
- diffusion profile
- dopant profile
- doping profile
- drift mobility profile
- etch profile
- firing profile
- Gaussian impurity profile
- graded profile
- hyperabrupt profile
- impurity profile
- ion-implantation profile
- lateral doping profile
- low profile
- n profile
- p profile
- potential profile
- resist profile
- resistivity profile
- solder-melt profile
- tailored doping profile
- undercut profile
- vertical doping profile -
4 layer
1. ім. шар; плівка 2. дієсл. наносити шар - accumulation layer
- amorphized layer
- anti-oxidation layer
- barrier layer
- base layer
- blanket layer
- blocking layer
- boundary layer
- branch layer
- buffer layer
- buried layer
- cap layer
- composite layer
- conducting layer
- conductor layer
- contact layer
- continuous layer
- depletion layer
- deposited layer
- diffused [diffusion] layer
- diffusion-impervious layer
- diffusion-source layer
- doped layer
- driving layer
- epitaxial layer
- epi layer
- etch-resistant layer
- evaporated layer
- evaporation layer
- field oxide layer
- Gaussian-doped layer
- heteroepitaxial layer
- high-concentration layer
- high-mobility layer
- homoepitaxial layer
- host layer
- implantation layer
- implanted layer
- impurity layer
- inert layer
- injection layer
- injector layer
- inset oxide layer
- insulating layer
- insulation layer
- insulator layer
- interconnection layer
- interface layer
- interfacial layer
- interlayer dielectric film layer
- intrinsic layer
- inversion layer
- ion-implantation layer
- lacquer layer
- lightly doped layer
- liquid-phase epitaxial layer
- low-mobility layer
- masking layer
- metallizationlayer
- metallayer
- metallized layer
- molecular epitaxy layer
- monoatomic layer
- monomolecular layer
- multiple layer
- multiple wiring layers
- n layer
- native layer
- nucleating layer
- ohmic layer
- organic passivation layer
- oxide-inhibiting layer
- p layer
- passivating layer
- passivation layer
- photosensitive layer
- planarizing layer
- polysilicon layer
- protective layer
- pyrolytically deposited layer
- registered layers
- resistive layer
- sacrificial layer
- sandwiched layers
- sealing layer
- seal layer
- separation layer
- signal layer
- source layer
- space-charge layer
- stepped layers
- stopping layer
- substrate layer
- superconductive layer
- superimposed layers
- superlattice layer
- supported semiconductor layer
- thermal-охide layer
- transition layer
- vacuum-deposited layer
- vacuum-evaporated layer
- via layer
- wiring layer
- wiring channel layer
- δ-doping layer -
5 semiconductor
1) напівпровідник 2) напівпровідниковий прилад - amorphous semiconductor
- bare semiconductor
- boron semiconductor
- broad-area semiconductor
- bulk semiconductor
- compensated semiconductor
- compound semiconductor
- cubic semiconductor
- degenerate semiconductor
- direct-gap semiconductor
- discrete semiconductor
- donor-type semiconductor
- double-heterojunction semiconductor
- electronic semiconductor
- elemental semiconductor
- extrinsic semiconductor
- fused semiconductor
- graded-gap semiconductor
- group III-V semiconductor
- high-mobility semiconductor
- high-ohmic semiconductor
- hole semiconductor
- impurity semiconductor
- indirect-gap semiconductor
- intrinsic semiconductor
- large-gap semiconductor
- leadless semiconductor
- low-bandgap semiconductor
- low-mobility semiconductor
- low-ohmic semiconductor
- low-resistance semiconductor
- microwave semiconductor
- narrow-bandgap semiconductor
- neutron transmutation doped semiconductor
- neutron doped semiconductor
- nondegenerate semiconductor
- n-type semiconductor
- optoelectronic semiconductor
- organo-metallic semiconductor
- power semiconductor
- p-type semiconductor
- resin-mold semiconductor
- small-gap semiconductor
- stoichiometric semiconductor
- substrate semiconductor
- synthetic semiconductor
- two-valley semiconductor
- wide-bandgap semiconductor
- zink-blende semiconductor
- II-VI compound semiconductorEnglish-Ukrainian dictionary of microelectronics > semiconductor
См. также в других словарях:
impurity mobility — priemaišų judris statusas T sritis fizika atitikmenys: angl. impurity mobility vok. Störstellenbeweglichkeit, f rus. подвижность примесей, f; подвижность примесных атомов, f pranc. mobilité d’impuretés, f … Fizikos terminų žodynas
Electron mobility — This article is about the mobility for electrons and holes in metals and semiconductors. For the general concept, see Electrical mobility. In solid state physics, the electron mobility characterizes how quickly an electron can move through a… … Wikipedia
Störstellenbeweglichkeit — priemaišų judris statusas T sritis fizika atitikmenys: angl. impurity mobility vok. Störstellenbeweglichkeit, f rus. подвижность примесей, f; подвижность примесных атомов, f pranc. mobilité d’impuretés, f … Fizikos terminų žodynas
mobilité d’impuretés — priemaišų judris statusas T sritis fizika atitikmenys: angl. impurity mobility vok. Störstellenbeweglichkeit, f rus. подвижность примесей, f; подвижность примесных атомов, f pranc. mobilité d’impuretés, f … Fizikos terminų žodynas
priemaišų judris — statusas T sritis fizika atitikmenys: angl. impurity mobility vok. Störstellenbeweglichkeit, f rus. подвижность примесей, f; подвижность примесных атомов, f pranc. mobilité d’impuretés, f … Fizikos terminų žodynas
подвижность примесей — priemaišų judris statusas T sritis fizika atitikmenys: angl. impurity mobility vok. Störstellenbeweglichkeit, f rus. подвижность примесей, f; подвижность примесных атомов, f pranc. mobilité d’impuretés, f … Fizikos terminų žodynas
подвижность примесных атомов — priemaišų judris statusas T sritis fizika atitikmenys: angl. impurity mobility vok. Störstellenbeweglichkeit, f rus. подвижность примесей, f; подвижность примесных атомов, f pranc. mobilité d’impuretés, f … Fizikos terminų žodynas
crystal — crystallike, adj. /kris tl/, n., adj., v., crystaled, crystaling or (esp. Brit.) crystalled, crystalling. n. 1. a clear, transparent mineral or glass resembling ice. 2. the transparent form of crystallized quartz. 3. Chem., Mineral. a solid body… … Universalium
Crystal — /kris tl/, n. 1. a city in SE Minnesota, near Minneapolis. 25,543. 2. a female given name. * * * I Any solid material whose atoms are arranged in a definite pattern and whose surface regularity reflects its internal symmetry. Each of a crystal s… … Universalium
semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… … Universalium
Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… … Wikipedia
